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IXFT16N90Q - Power MOSFET

Download the IXFT16N90Q datasheet PDF. This datasheet also covers the IXFH16N90Q variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA 900 VDS = VGS, ID = 4 mA 3.0 V GS = ±20 V, DC V DS = 0 VDS = VDSS V =0V GS TJ = 25°C T J = 125°C VGS = 10 V, ID = 0.5.
  • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % V 5.0 V ±200 nA 50 µA 2 mA 0.65 Ω z IXYS advanced low Qg process z International standard packages z Epoxy meet UL 94 V-0, flammability classificat.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH16N90Q-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFT100N30X3HV N-Channel Power MOSFET
IXFT10N100 Power MOSFETs
IXFT12N100 Power MOSFETs
IXFT13N100 Power MOSFETs
IXFT140N20X3HV Power MOSFET

Full PDF Text Transcription

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q VDSS = 900 V ID25 = 16 A RDS(on) = 0.65 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 I DM IAR E AR EAS dv/dt PD T J TJM T stg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM TC = 25°C T C = 25°C TC = 25°C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Maximum Ratings 900 V 900 V ±20 V ±30 V 16 A 64 A 16 A 45 mJ 1.5 J 5 V/ns 360 W -55 ... +150 °C 150 °C -55 ...
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