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IXFQ8N85X - Power MOSFET

Download the IXFQ8N85X datasheet PDF. This datasheet also covers the IXFA8N85XHV variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • High Voltage Package.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFA8N85XHV-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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PreliminaryTechnical Information X-Class HiPERFET Power MOSFET N-Channel Enhancement Mode IXFA8N85XHV IXFP8N85X IXFQ8N85X VDSS = ID25 =  RDS(on) 850V 8A 850m TO-263HV (IXFA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 850 V 850 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 8 16 4 300 50 200 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263HV) Mounting Torque (TO-220 & TO-3P) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.
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