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IXFP30N60X - Power MOSFET

This page provides the datasheet information for the IXFP30N60X, a member of the IXFA30N60X Power MOSFET family.

Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

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Datasheet preview – IXFP30N60X

Datasheet Details

Part number IXFP30N60X
Manufacturer IXYS
File Size 208.74 KB
Description Power MOSFET
Datasheet download datasheet IXFP30N60X Datasheet
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Full PDF Text Transcription

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X-Class HiPerFETTM Power MOSFET Advance Technical Information IXFA30N60X IXFP30N60X VDSS = ID25 = RDS(on) 600V 30A 155m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 600 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 30 60 10 1 50 500 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) Mounting Torque (TO-220) 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.
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