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IXFK69N30P - PolarHT HiPerFET Power MOSFET

Download the IXFK69N30P datasheet PDF. This datasheet also covers the IXFH69N30P variant, as both devices belong to the same polarht hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 TO-264 300 1.13/10 Nm/lb. in. 6 10 g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.

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Note: The manufacturer provides a single datasheet file (IXFH69N30P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXFK100N10 Power MOSFET IXYS Corporation
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFK64N50P Power MOSFET
IXFK64N50Q3 Power MOSFET
IXFK64N60P PolarHV HiPerFET Power MOSFET
IXFK64N60Q3 Power MOSFET
IXFK66N50Q2 Power MOSFET

Full PDF Text Transcription

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PolarHT HiPerFET Power MOSFET TM IXFH69N30P IXFK69N30P N-Channel Enhancement Mode Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 300 V = 69 A = 49 mΩ ≤ 200 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 69 200 69 50 1.5 10 500 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 (IXFH) G D (TAB) D S TO-264 (IXFK) G D D (TAB) S D = Drain TAB = Drain G = Gate S = Source Features z z 1.6 mm (0.062 in.
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