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HiPerFETTM Power MOSFETs
IXFH 26N60/IXFT 26N60 IXFK 28N60
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t
rr
Preliminary data
V DSS
I
D25
600 V 26 A
600 V 28 A
trr £ 250 ns
R DS(on)
0.25 W 0.25 W
Symbol
VDSS VDGR V
GS
VGSM I
D25
I
DM
I
AR
EAR EAS
dv/dt
P D
TJ TJM Tstg TL
Md Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous
Transient
T C
= 25°C, Chip capability
T C
=
25°C,
pulse
width
limited
by
T JM
T C
= 25°C
TC = 25°C TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
T C
= 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque
Maximum Ratings IXFH/ IXFT IXFK
600 600 600 600
±20 ±20 ±30 ±30
26 28 104 112
26 28
50 50 1.5 1.5
V V
V V
A A A
mJ J
5 5 V/ns
360 416
-55 ... +150 150
-55 ...
IXFH26N60 Datasheet
