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IXFH18N60X - Power MOSFET

Download the IXFH18N60X datasheet PDF. This datasheet also covers the IXFA18N60X variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFA18N60X-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH18N60X N-Channel MOSFET INCHANGE
IXFH18N60P PolarHV HiPerFET Power MOSFET IXYS Corporation
IXFH18N65 Power MOSFET IXYS Corporation
IXFH18N100Q3 Power MOSFET IXYS Corporation
IXFH18N90P Polar Power MOSFET HiPerFET IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH18N65X2 Power MOSFET
IXFH180N20X3 Power MOSFET
IXFH100N25P PolarHT HiPerFET Power MOSFET
IXFH100N30X3 N-Channel Power MOSFET
IXFH110N10P PolarHT HiPerFET Power MOSFET

Full PDF Text Transcription

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X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA18N60X IXFP18N60X IXFH18N60X VDSS = ID25 = RDS(on) 600V 18A 230m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TLTL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 600 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 18 36 5 500 50 320 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 260 °C °C Mounting Force (TO-263) 10..65 / 2.2..14.
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