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IXDT30N120 - High Voltage IGBT

Download the IXDT30N120 datasheet PDF. This datasheet also covers the IXDH30N120 variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • q q q q q q q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard packages Advantages Space savings High power density IXDT: surface mountable high power package 1.1/10 Nm/lb. in. 6 g q Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXDH30N120_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA G IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 C G C VCES = 1200 V = 60 A IC25 VCE(sat) typ = 2.4 V TO-247 AD (IXDH) E IXDH 30N120 IXDT 30N120 E IXDH 30N120 D1 IXDT 30N120 D1 G C E C (TAB) TO--268 AA (IXDT) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.
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