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IXA60IF1200NA - XPT IGBT

Description

Quantity Code No.

Features

  • / Advantages:.
  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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📁 Similar Datasheet

Part Number Description Manufacturer
IXA611 Half-Bridge Driver IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

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IXA12IF1200HB XPT IGBT
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IXA17IF1200HJ XPT IGBT

Full PDF Text Transcription

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XPT IGBT Copack Part number IXA60IF1200NA IXA60IF1200NA VCES = I C25 = V = CE(sat) 1200 V 88 A 1.8 V C (3) Backside: isolated (G) 2 E (1+4) Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.
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