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IXA20I1200PB - XPT IGBT

Features

  • / Advantages:.
  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).

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IXA20I1200PB preliminary XPT IGBT Single IGBT (C) 2 I C25 = = VCES VCE(sat)typ = 33 A 1200 V 1.8 V Part number IXA20I1200PB (G) 1 (E) 3 Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.
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