IX150T06M-AG - XPT IGBT

Features

/ Advantages:.
Easy paralleling due to the positive temperature coefficient of the on-state voltage.
Rugged Trench XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 2x Ic - low EMI - Tvjm = 175°C.
Thin wafer technology combined with the XPT design results in a competitive low Vce(sat).
Solderable/sinterable frontside metallization for highly reliable interconnection technology Mechanical Parameters.

IXYS

Datasheet Details

Part number	IX150T06M-AG
Manufacturer	IXYS
File Size	69.47 KB
Description	XPT IGBT
Datasheet	IX150T06M-AG Datasheet
Additional preview pages of the IX150T06M-AG datasheet.

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Full PDF Text Transcription

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Trench XPT IGBT Chip IX150T06M-AG tentative Type VCE [V] IX150T06M-AG 650 IC Chip Size Package [A] [mm] x [mm] 300 14.2 10.6 sawn on foil unsawn wafer in waffle pack Ordering Code tbd tbd tbd Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged Trench XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.

Published: Oct 1, 2023 |