DSEE6-06CC Datasheet | IXYS

Features λ λ λ λ λ λ λ λ TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 m A Mounting force typical 50 2500 2 11...65 / 2 11 N / lb Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (<15p F) Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications λ Symbol IR c VF e Rth JC Rth CH trr IRM Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 10 A; TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. 25 0.2 1.35 1.8 3.0 0.6 µA m A V V K/W K/W ns A λ λ λ λ λ λ λ Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IF = 1 A; -di/dt = 50 A/µs; VR = 30 V;...