DSEA59-06BC
Features z Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z Low cathode to tab capacitance (<15p F) z Planar passivated chips z Very short recovery time z Extremely low switching losses z Low IRM-values z Soft recovery behaviour z Epoxy meets UL 94V-0
Applications z Antiparallel diode for high frequency switching devices z Antisaturation diode z Snubber diode z Free wheeling diode in converters and motor control circuits z Rectifiers in switch mode power supplies (SMPS) z Inductive heating z Uninterruptible power supplies (UPS) z Ultrasonic cleaners and welders
Advantages z Avalanche voltage rated for reliable operation z Soft reverse recovery for low EMI/RFI z Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the mutating switch
See DSEP 29-06B data sheet for characteristic curves
IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights...
