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DPJ50XS1800NA - High Performance Dynamic Fast Recovery Diode

General Description

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Key Features

  • / Advantages:.
  • Planar passivated chips.
  • Very low leakage current.
  • Very short recovery time.
  • Improved thermal behaviour.
  • Very low Irm-values.
  • Very soft recovery behaviour.
  • Avalanche voltage rated for reliable operation.
  • Soft reverse recovery for low EMI/RFI.
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch.

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Full PDF Text Transcription (Reference)

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HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Parallel legs with series connected dice Part number DPJ50XS1800NA DPJ50XS1800NA VRRM I FAV t rr = 1800 V = 2x 25 A = 30 ns 2 1 3 4 Backside: isolated Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies