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VWM350-0075P - Three phase full bridge

Key Features

  • MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode.
  • package: - high level of integration - solder terminals for PCB mounting - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2 0.25 0.2 450 60 170 60 170 320 200 1.1 90 0.51 1.6 3.3 m Ω 4 0.02 V mA mA µA nC nC nC ns ns ns ns V ns 0.26 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr t.

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VWM 350-0075P Three phase full bridge with Trench MOSFETs Preliminary data L+ VDSS = 75 V RDSon = 2.3 mΩ ID25 = 340 A T1 G1 S1 G3 S3 T2 G5 S5 T3 T4 G2 G4 S4 T5 G6 S6 T6 L1 L2 L3 S2 L- MOSFETs T1 - T6 Symbol VDSS VGS ID25 ID80 ID25 ID80 TC = 25°C TC = 80°C TC = 25°C (diode) TC = 80°C (diode) Conditions TVJ = 25°C to 150°C Maximum Ratings 75 ±20 340 250 340 250 V V A A A A Applications AC drives • in automobiles - electric power steering - starter generator - etc...