VUO50-18NO3
Features
/ Advantages:
- Package with DCB ceramic
- Reduced weight
- Improved temperature and power cycling
- Planar passivated chips
- Very low forward voltage drop
- Very low leakage current
Applications:
- Diode for main rectification
- For three phase bridge configurations
- Supplies for DC power equipment
- Input rectifiers for PWM inverter
- Battery DC power supplies
- Field supply for DC motors
Package: FO-F-B
- Isolation Voltage: 3600 V~
- Industry standard outline
- Ro HS pliant
- ¼“ fast-on terminals
- Easy to mount with two screws
- Base plate: DCB ceramic
- Reduced weight
- Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130527b
Rectifier
Symbol VRSM VRRM IR
I DAV
Definition
Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current
VR = 1800 V
VR =...
