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VHM40-06P1 - CoolMOS Power MOSFET

Key Features

  • ECO-PAC 2 with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - solderable pins for DCB mounting fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density.
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www.DataSheet4U.com VHM40-06P1 CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base K 12 ID25 = 38 A VDSS = 600 V RDSon = 70 mΩ 1) L4 L6 L9 P 18 R 18 K 13 K10 T 18 V 18 X 18 Pin arangement see outlines F10 Preliminary data sheet NTC MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°C ID = 10 A; L = 36 mH; TC = 25°C ID = 20 A; L = 5 µH; TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ±20 38 25 6 1.