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Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA220N075T IXTP220N075T
VDSS = ID25 =
RDS(on) ≤
75 220 4.5
V A mΩ
Symbol
VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque (TO-220)
TO-220 TO-263
Maximum Ratings
75 V 75 V
± 20 V
220 A 75 A
600 A
25 A 1.0 J
TO-263 (IXTA) G S
TO-220 (IXTP)
(TAB)
3 V/ns
480
-55 ... +175 175
-55 ... +175
W
°C °C °C
300 °C 260 °C
1.13 / 10 Nm/lb.in.
IXTP220N075T Datasheet
