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IXTP180N10T - Power MOSFET

Download the IXTP180N10T datasheet PDF. This datasheet also covers the IXTA180N10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA180N10T-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP180N10T N-Channel MOSFET INCHANGE
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IXTP18N60PM Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP180N055T (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET
IXTP180N085T Power MOSFET
IXTP182N055T Power MOSFET
IXTP10N60PM PolarHV Power MOSFET
IXTP110N055P PolarHT Power MOSFET

Full PDF Text Transcription

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA180N10T IXTP180N10T VDSS = 100V ID25 = 180A RDS(on) ≤ 6.4mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.
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