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Advance Technical Information
High Current Power MOSFET
N-Channel Enhancement Mode
IXTH 88N15 IXTT 88N15
V DSS I D25
RDS(on)
= = =
150 V 88 A 22 mΩ
Symbol V DSS V DGR VGS VGSM I D25 I DM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 150 150 ± 20 ± 30 88 352 88 50 1.5 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C
TO-247 AD (IXTH)
(TAB)
TO-268 (IXTT) Case Style
G G = Gate S = Source S D = Drain TAB = Drain
(TAB)
Features
z z z z
1.6 mm (0.062 in.
IXTH88N15 Datasheet
