Datasheet4U Logo Datasheet4U.com

IXTA220N075T7 - Power MOSFET

Features

  • °C °C °C Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance °C - easy to drive and to protect °C 175 °C Operating Temperature g Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Note 1 Characteristic Values Min. Typ.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTA220N075T N-Channel MOSFET INCHANGE
IXTA220N04T2 Power MOSFET IXYS
IXTA220N04T2 N-Channel MOSFET INCHANGE
IXTA220N04T2-7 Power MOSFET IXYS
IXTA220N055T Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTA220N075T Power MOSFET
IXTA220N055T7 Power MOSFET
IXTA200N075T7 Power MOSFET
IXTA200N085T7 Power MOSFET
IXTA240N055T7 Power MOSFET

Full PDF Text Transcription

Click to expand full text
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA220N075T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 75 220 4.5 V A mΩ Symbol VDSS VDGR VGSM ID25 IIDLRMMS IAR EAS dv/dt PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Transient TC = 25°C Package Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 3.3 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA..7) 75 V 75 V ± 20 220 120 600 25 1.0 3 V A A A A J V/ns 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) 480 -55 ... +175 175 -55 ...
Published: |