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IXRH50N100 - IGBT with Reverse Blocking capability

Features

  • q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage - optimum current distribution when paralleled Epoxy of TO 247 package meets UL 94V-0 Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.5 3.0 4 3.0 500 80 100 38.

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Advanced Technical Information www.DataSheet4U.com IGBT with Reverse Blocking capability IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A VCE(sat) = 2.
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