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IXKR25N80C - CoolMOS Power MOSFETs

Features

  • J mJ Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 125 2 100 200 166 18 84 25 15 72 6 1 1.3 150 m Ω 4 50 V µA µA nA nC nC nC ns ns ns ns V.
  • ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - JEDEC TO247AD compatible - Easy clip assembly.
  • fast CoolMOS power MOSFE.

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Full PDF Text Transcription

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Advanced Technical Information www.DataSheet4U.com CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base G VDSS IXKR 25N80C 800 V ID25 RDS(on) 25 A 125 mΩ D *) S MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 17 A;diF /dt≤ 100 A/µs TVJ = 150°C ID = 4 A; L = 80 mH; TC = 25°C ID = 17 A; L = 3.3 µH; TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 800 ±20 25 18 6 0.67 0.5 V V A A V/ns ISOPLUS 247TM E153432 G D Isolated base* G = Gate D = Drain S = Source * Patent pending Features J mJ Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 125 2 100 200 166 18 84 25 15 72 6 1 1.
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