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IXFT60N20F - HiPerRFTM Power MOSFETs

Download the IXFT60N20F datasheet PDF. This datasheet also covers the IXFH60N20F variant, as both devices belong to the same hiperrftm power mosfets family and are provided as variant models within a single manufacturer datasheet.

Features

  • l l l 1.13/10 Nm/lb. in. 6 4 g g l l RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH60N20F_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFT60N20 HiPerFET Power MOSFETs
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IXFT66N20Q Power MOSFET
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Full PDF Text Transcription

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Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 60N20F IXFT 60N20F VDSS ID25 RDS(on) = = = 200V 60A 38mΩ trr ≤ 200 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings (TAB) 200 200 ± 20 ± 30 60 240 60 35 1.5 10 315 -55 ... +150 150 -55 ...
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