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IXFT26N60P - N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

Download the IXFT26N60P datasheet PDF (IXFV26N60P included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel enhancement mode fast recovery diode avalanche rated.

Features

  • z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99435(08/05) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved IXFV 26N60P Symbol Test Conditions IXFH 26N60P IXFQ 26N60P IXFV 26N60PS www. DataSheet4U. com IXFT 26N60P Characteristic Values (TJ = 25°C, unless otherwise spec.

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Note: The manufacturer provides a single datasheet file (IXFV26N60P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Advance AdvanceTechnical TechnicalInformation Information www.DataSheet4U.com PolarHVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr TO-247 (IXFH) 600 V 26 A 270 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 26 65 26 40 1.2 10 V V V V A A A mJ J V/ns G D G D TO-3P (IXFQ) S S D (TAB) TO-268 (IXFT) G S D (TAB) PLUS220 (IXFV) 460 -55 ...
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