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IXFT24N90P - Polar Power MOSFET HiPerFET

Download the IXFT24N90P datasheet PDF. This datasheet also covers the IXFH24N90P variant, as both devices belong to the same polar power mosfet hiperfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z z TAB TO-268 (IXFT) G S TAB G = Gate S = Source D = Drain TAB = Drain International standard packages Avalanche Rated Low package inductance Fast intrinsic diode Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 900 3.5 6.5 ± 200 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH24N90P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFT24N50 Power MOSFET
IXFT24N50Q Power MOSFET
IXFT24N80P PolarHV HiPerFET Power MOSFET
IXFT20N100P Polar Power MOSFET HiPerFET
IXFT20N60Q HiPerFET Power MOSFETs Q-Class

Full PDF Text Transcription

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Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH24N90P IXFT24N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 24A 420mΩ 300ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Maximum lead temperature for soldering Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 900 900 ± 30 ± 40 24 48 12 1 15 660 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 4 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.
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