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IXFP76N15T2 - Power MOSFET

Features

  • International Standard Packages.
  • 175°C Operating Temperature.
  • High Current Handling Capability.
  • Fast Intrinsic Rectifier.
  • Dynamic dv/dt Rated.
  • Low RDS(on) Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Full PDF Text Transcription

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TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM,, VDD  VDSS,TJ  175C TC = 25C 76 200 38 500 15 350 -55 ... +175 175 -55 ... +175 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.
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