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IXFN80N60P3 - Polar3 HiPerFET Power MOSFET

Features

  • International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance z z z z z z z 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque 2500 3000 1.5/13 1.3/11.5 30 Advantages z z z High Power Density Easy to Mount Space Savings Symbol Test Conditions (TJ = 25°C Unless Otherw.

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Full PDF Text Transcription

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Advance Technical Information Polar3TM HiPerFETTM Power MOSFET IXFN80N60P3 VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = = ≤ ≤ 600V 66A 70mΩ 250ns miniBLOC E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ±30 ±40 66 200 40 2 35 960 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g z z z S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal.
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