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IXFH6N120P - Power MOSFET

Download the IXFH6N120P datasheet PDF. This datasheet also covers the IXFP6N120P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • Dynamic dv/dt Rating.
  • Avalanche Rated.
  • Fast Intrinsic Diode.
  • Low QG & RDS(on).
  • Low Drain-to-Tab Capacitance.
  • Low Package Inductance Advantages.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFP6N120P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH6N120P N-Channel MOSFET Transistor Inchange Semiconductor
IXFH6N100 Power MOSFETs IXYS
IXFH6N90 Power MOSFETs IXYS
IXFH60N60X Power MOSFET IXYS
IXFH60N60X N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFH6N100F Power MOSFETs
IXFH6N90 Power MOSFET
IXFH60N20 HiPerFET Power MOSFETs
IXFH60N20F HiPerRFTM Power MOSFETs
IXFH60N25Q Power MOSFET

Full PDF Text Transcription

Click to expand full text
PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA6N120P IXFP6N120P IXFH6N120P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 6 18 3 300 10 250 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-247 & TO-220) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.
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