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PolarTM HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFH12N100P IXFV12N100P IXFV12N100PS
VDSS ID25
RDS(on) trr
= = ≤ ≤
1000V 12A 1.05Ω 300ns
PLUS220 (IXFV)
G
D
S
D (Tab)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1000 1000 ± 30 ± 40 12 24 6 750 15 463 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. N/lb.
IXFH12N100P Datasheet
