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IXFG55N50 - HiPerFET Power MOSFET

Features

  • z z z z z 1.6 mm (0.063 in. ) from case for 10 s 50/60 Hz, RMS Mounting torque t = 1 min 300 2500 0.4/6 Nm/lb-in z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(.

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Full PDF Text Transcription

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HiPerFETTM Power MOSFETs IXFG 55N50 ISOPLUS247TM (Electrically Isolated Back Surface) Single Die MOSFET VDSS ID25 RDS(on) = 500 V = 48 A = 90 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ± 20 ± 30 48 220 55 60 3 5 400 -40 ... +150 150 -40 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ ISO264TM G D S (TAB) G = Gate S = Source D = Drain Features z z z z z 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS Mounting torque t = 1 min 300 2500 0.
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