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IXFA7N80P - Power MOSFET

Download the IXFA7N80P datasheet PDF. This datasheet also covers the IXFP7N80P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z z z 1.6mm (0.062in. ) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C VGS = 10V, ID = 0.5.
  • ID25, Notes 1, 2 Charac.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFP7N80P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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PolarTM HiPerFETTM Power MOSFET IXFA7N80P IXFP7N80P VDSS ID25 trr RDS(on) = 800V = 7A ≤ 1.44Ω ≤ 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 800 800 ±30 ±40 7 18 4 300 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g z S D (Tab) TO-220AB (IXFP) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z z z z z 1.6mm (0.062in.
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