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IXFA5N100P - Power MOSFET

Download the IXFA5N100P datasheet PDF. This datasheet also covers the IXFP5N100P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z z z z z International standard packages Dynamic dv/dt Rating Avalanche Rated Low RDS(ON), rugged PolarTM process Low QG Low Drain-to-Tab capacitance Low package inductance Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ±30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.0 6.0 V V Advantages z z Easy to mount Space savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFP5N100P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXFA110N15T2 N-Channel MOSFET INCHANGE
IXFA12N65X2 Power MOSFET IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXFA102N15T Power MOSFET
IXFA10N60P Polar MOSFET
IXFA10N80P Power MOSFET
IXFA110N15T2 Power MOSFET
IXFA12N50P Polar MOSFET

Full PDF Text Transcription

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Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA5N100P IXFH5N100P IXFP5N100P RDS(on) VDSS ID25 = 1000V = 5A ≤ 2.8Ω TO-263 (IXFA) G Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ±30 ±40 5 10 5 300 10 250 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. g g g G = Gate S = Source G G D S S (TAB) TO-247 (IXFH) (TAB) TO-220 (IXFP) DS (TAB) 1.6mm (0.
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