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IXBL64N250 - Monolithic Bipolar MOS Transistor

Features

  • z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V∼ Electrical Isolation z High Blocking Voltage z Low Switching Losses z High Current Handling Capability z Anti-Parallel Diode Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 1mA, VGE = 0V VGE(th) IC = 4mA, VCE = VGE ICES VCE = 0.8.
  • VCES, VGE = 0V Note 2, TJ = 125°C IGES VCE = 0V, VGE = ± 25V VCE(sat) IC.

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Full PDF Text Transcription

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Advance Technical Information High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL64N250 VCES IC110 VCE(sat) = = ≤ 2500V 46A 3.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol VCES VCGR VGES VGEM IC25 IICCM110 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 2500 2500 ±25 ±35 V V V V TC = 25°C TTCC = 110°C = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load VRGGE = = 51Ω5V, ,VTCEJ = 125°C = 1250V, Non-Repetitive TC = 25°C 116 46 750 ICM = 160 VCE < 0.8 • VCES 10 500 -55 ... +150 150 -55 ... +150 A A A A μs W °C °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
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