• Part: DSEE30-12A
  • Description: HiPerFRED Epitaxial Diode
  • Category: Diode
  • Manufacturer: IXYS
  • Size: 117.64 KB
Download DSEE30-12A Datasheet PDF
IXYS
DSEE30-12A
Features Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 A °C °C °C °C W Nm/ lb.in. g - - - - 1.6 mm (0.063 in) from case for 10 s TC = 25°C Mounting Torque typical 260 165 0.9/6 2 Applications - - - - Symbol IRcd VF e Rth JC Rth CH trr IRM Conditions TVJ = 25°C VR = VRRM TVJ = 150°C V R = VRRM IF = 30 A; TVJ = 125°C TVJ = 25°C Characteristic Values typ. max. 200 2 1.75 2.5 0.9 0.25 µA m A V V K/W K/W ns A - - - - Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages - - IF = 1 A; -di/dt = 200 A/µs; VR = 30 V VR = 100 V; IF = 50 A; -di F/dt = 100 A/µs TVJ = 100°C 30 4 - Avalanche voltage rated for reliable operation Soft reverse recovery for...