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DSEA16-06AC - (DSEA16-06AC / DSEC16-06AC) HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM

Key Features

  • l 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL £ 1 mA mounting force with clip typical 260 50 2500 1165 / 2.515 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
DSEA16-06BC (DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220
DSEC16-06BC (DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220
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DSEC60-02A HiPerFRED Epitaxial Diode
DSEC60-02AQ HiPerFRED Epitaxial Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface DSEA IFAV VRRM trr DSEA 16-06AC DSEC 16-06AC = 2x8 A = 600 V = 35 ns VRSM V 600 600 VRRM V 600 600 Type 1 DSEC 2 3 ISOPLUS220TM 1 2 3 Isolated back surface * 1 2 3 * Patent pending DSEA 16-06AC DSEC 16-06AC Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Conditions TC = 120°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 8 50 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A °C °C °C °C W V~ N / lb g Applications l l l l l l l l Features l 1.6 mm (0.