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IV3Q12013T4Z - Gen3 1200V Automotive SiC MOSFET

Features

  • Outline:.
  • 3rd Generation SiC MOSFET Technology with +15~+18V gate drive.
  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitance.
  • High operating junction temperature capability.
  • Very fast, robust and soft-recovery intrinsic body diode.
  • Kelvin gate input easing driver circuit design.
  • AEC-Q101 qualified TO247-4.

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Datasheet Details

Part number IV3Q12013T4Z
Manufacturer IVCT
File Size 1.93 MB
Description Gen3 1200V Automotive SiC MOSFET
Datasheet download datasheet IV3Q12013T4Z Datasheet

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Jun. 2024 IV3Q12013T4Z- Gen3 1200V 13.
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