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16M x 8 HyperRAM™
IS66WVH16M8ALL/BLL IS67WVH16M8ALL/BLL
6(37(0%(5 2018
Overview
The IS66/67WVH16M8ALL/BLL are integrated memory device of 128Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 16M words by 8 bits. The device is a dual die stack of two 64Mb die. The device supports a HyperBus interface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobile and Automotive applications.
Distinctive Characteristics
HyperBusTM Low Signal Count Interface
3.0V I/O, 11 bus signals – Single ended clock (CK)
1.