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IS65WV6416DBLL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV6416DBLL datasheet PDF. This datasheet also covers the IS62WV6416DALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

by 16 bits.

CMOS technology.

Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation: 15 mW (typical) operating 1.5 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply 1.65V--2.2V Vdd (62WV6416DALL) 2.3V--3.6V Vdd (65WV6416DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and automotive temperature support.
  • 2CS Option Ava.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV6416DALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS65WV6416DALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS65WV102416DBLL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS65WV102416EALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416EBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription

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IS62WV6416DALL/DBLL IS65WV6416DALL/DBLL 64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DECEMBER 2012 FEATURES • High-speed access time: 35ns, 45ns, 55ns • CMOS low power operation: 15 mW (typical) operating 1.5 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V Vdd (62WV6416DALL) 2.3V--3.6V Vdd (65WV6416DBLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and automotive temperature support • 2CS Option Available • Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV6416DALL and IS62/65WV6416DBLL are high-speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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