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IS65WV5128EBLL - ULTRA LOW POWER CMOS STATIC RAM

This page provides the datasheet information for the IS65WV5128EBLL, a member of the IS62WV5128EALL ULTRA LOW POWER CMOS STATIC RAM family.

Datasheet Summary

Description

The ISSI IS62/65WV5128EALL/BLL/CLL are highspeed, 4M bit static RAMs organized as 512K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 22 mA (max) at 85°C.
  • CMOS Standby Current: 3.7uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV5128EALL).
  • 2.2V-3.6V VDD (IS62/65WV5128EBLL).
  • 3.3V +/-5% VDD (IS62/65WV5128ECLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

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Datasheet preview – IS65WV5128EBLL

Datasheet Details

Part number IS65WV5128EBLL
Manufacturer ISSI
File Size 804.55 KB
Description ULTRA LOW POWER CMOS STATIC RAM
Datasheet download datasheet IS65WV5128EBLL Datasheet
Additional preview pages of the IS65WV5128EBLL datasheet.

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Full PDF Text Transcription

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IS62WV5128EALL/EBLL/ECLL IS65WV5128EBLL/ECLL 512Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM APRIL 2017 KEY FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV5128EALL) – 2.2V-3.6V VDD (IS62/65WV5128EBLL) – 3.3V +/-5% VDD (IS62/65WV5128ECLL)  Three state outputs  Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65WV5128EALL/BLL/CLL are highspeed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.
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