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IS65C5128EL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65C5128EL datasheet PDF. This datasheet also covers the IS62C5128EL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The ISSI IS62/65C5128EL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 22 mA (max) at 85°C.
  • CMOS Standby Current: 5.0uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single 5V ± 10 % power supply.
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62C5128EL-ISSI.pdf) that lists specifications for multiple related part numbers.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS65C5128BL 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS65C1024AL 128K x 8 LOW POWER CMOS STATIC RAM
IS65C25616BL 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS65C25616EL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS65WV102416DBLL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS65WV102416EALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416EBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416FALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416FBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription for IS65C5128EL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IS65C5128EL. For precise diagrams, tables, and layout, please refer to the original PDF.

IS62C5128EL, IS65C5128EL 512Kx8 HIGH SPEED, ULTRA LOW POWER CMOS STATIC RAM NOVEMBER 2021 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – O...

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ES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 5.0uA (typ) at 25°C  TTL compatible interface levels  Single 5V ± 10 % power supply  Three state outputs  Industrial and Automotive temperature support  Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65C5128EL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consump