Datasheet4U Logo Datasheet4U.com

IS62WV5128ECLL - ULTRA LOW POWER CMOS STATIC RAM

This page provides the datasheet information for the IS62WV5128ECLL, a member of the IS62WV5128EALL ULTRA LOW POWER CMOS STATIC RAM family.

Datasheet Summary

Description

The ISSI IS62/65WV5128EALL/BLL/CLL are highspeed, 4M bit static RAMs organized as 512K words by 8 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 35ns, 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 22 mA (max) at 85°C.
  • CMOS Standby Current: 3.7uA (typ) at 25°C.
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV5128EALL).
  • 2.2V-3.6V VDD (IS62/65WV5128EBLL).
  • 3.3V +/-5% VDD (IS62/65WV5128ECLL).
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

📥 Download Datasheet

Datasheet preview – IS62WV5128ECLL

Datasheet Details

Part number IS62WV5128ECLL
Manufacturer ISSI
File Size 804.55 KB
Description ULTRA LOW POWER CMOS STATIC RAM
Datasheet download datasheet IS62WV5128ECLL Datasheet
Additional preview pages of the IS62WV5128ECLL datasheet.

📁 Similar Datasheet

  • IS62WV5128ALL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV5128BLL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV5128CLL - 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM (Integrated Silicon Solution)
  • IS62WV51216ALL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV51216BLL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV102416ALL - 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV102416BLL - 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV10248BLL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV1288ALL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
  • IS62WV1288BLL - ULTRA LOW POWER CMOS STATIC RAM (Integrated Silicon Solution)
Other Datasheets by ISSI

Full PDF Text Transcription

Click to expand full text
IS62WV5128EALL/EBLL/ECLL IS65WV5128EBLL/ECLL 512Kx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM APRIL 2017 KEY FEATURES  High-speed access time: 35ns, 45ns, 55ns  CMOS low power operation – Operating Current: 22 mA (max) at 85°C – CMOS Standby Current: 3.7uA (typ) at 25°C  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV5128EALL) – 2.2V-3.6V VDD (IS62/65WV5128EBLL) – 3.3V +/-5% VDD (IS62/65WV5128ECLL)  Three state outputs  Industrial and Automotive temperature support  Lead-free available DESCRIPTION The ISSI IS62/65WV5128EALL/BLL/CLL are highspeed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology.
Published: |