IS61WV25616EDBLL Datasheet PDF - ISSI 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Specs

IS61WV25616EDBLL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Datasheet Summary

Description

by 16 bits.

CMOS technology.

Features

High-speed access time: 8, 10 ns.
Low Active Power: 85 mW (typical).
Low Standby Power: 7 mW (typical) CMOS standby.
Single power supply.
Vdd 2.4V to 3.6V (10 ns).
Vdd 3.3V ± 10% (8 ns).
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial and Automotive temperature support.
Lead-free available.
Error Detection and E.

Datasheet Details

Part number	IS61WV25616EDBLL
Manufacturer	ISSI
File Size	567.86 KB
Description	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS61WV25616EDBLL Datasheet
Additional preview pages of the IS61WV25616EDBLL datasheet.

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Full PDF Text Transcription

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IS61WV25616EDBLL IS64WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC JULY 2020 FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperature support • Lead-free available • Error Detection and Error Correction FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61/64WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.

Published: Sep 13, 2015 |