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IS61WV25616ALL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Datasheet Summary

Description

262,144 words by 16 bits.

Features

  • HIGH SPEED: (IS61/64WV25616ALL/BLL).
  • High-speed access time: 8, 10, 20 ns.
  • Low Active Power: 85 mW (typical).
  • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS).
  • High-speed access time: 25, 35, 45 ns.
  • Low Active Power: 35 mW (typical).
  • Low Standby Power: 0.6 mW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV25616Axx).
  • Vdd 2.4V to 3.6V (IS61/64WV25616Bxx).

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Datasheet Details

Part number IS61WV25616ALL
Manufacturer ISSI
File Size 333.17 KB
Description 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet download datasheet IS61WV25616ALL Datasheet
Additional preview pages of the IS61WV25616ALL datasheet.

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Full PDF Text Transcription

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IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM JULY 2022 FEATURES HIGH SPEED: (IS61/64WV25616ALL/BLL) • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS) • High-speed access time: 25, 35, 45 ns • Low Active Power: 35 mW (typical) • Low Standby Power: 0.6 mW (typical) CMOS standby • Single power supply — Vdd 1.65V to 2.2V (IS61WV25616Axx) — Vdd 2.4V to 3.
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