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IS61WV20488BLL - 2M x 8 HIGH-SPEED CMOS STATIC RAM

Download the IS61WV20488BLL datasheet PDF. This datasheet also covers the IS64WV20488BLL variant, as both devices belong to the same 2m x 8 high-speed cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

IS64WV20488BLL are very high-speed, low power, 2M-word by 8-bit CMOS static RAM.

Features

  • High-speed access times: 8, 10, 20 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CE and OE op- tions.
  • CE power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV20488ALL) speed = 20ns for Vcc = 1.65V to 2.2V.
  • Vdd.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS64WV20488BLL_ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS61WV12816DALL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DALS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS61WV51216ALL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61WV20488ALL 2M x 8 HIGH-SPEED CMOS STATIC RAM
IS61WV20488FALL 2M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV20488FBLL 2M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV204816ALL 2Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV204816BLL 2Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription

Click to expand full text
IS61WV20488ALL IS61/64WV20488BLL 2M x 8 HIGH-SPEED CMOS STATIC RAM June 2014 FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE op- tions • CE power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply – Vdd 1.65V to 2.2V (IS61WV20488ALL) speed = 20ns for Vcc = 1.65V to 2.2V – Vdd 2.4V to 3.6V (IS61/64WV20488BLL) speed = 10ns for Vcc = 2.4V to 3.6V speed = 8ns for Vcc = 3.
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