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IS61WV12824 - 128K x 24 HIGH-SPEED CMOS STATIC RAM

Datasheet Summary

Description

The ISSI IS61WV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits.

performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

Features

  • High-speed access time: 8, 10 ns.
  • High-performance, low-power CMOS process.
  • TTL compatible interface levels.
  • Single power supply VDD 3.3V ± 5% for 8ns VDD 2.4V to 3.6V for 10ns.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Available in 119-pin Ball Grid Array (BGA) package.
  • Industrial temperature available.
  • Lead-free available.

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Datasheet preview – IS61WV12824

Datasheet Details

Part number IS61WV12824
Manufacturer ISSI
File Size 346.15 KB
Description 128K x 24 HIGH-SPEED CMOS STATIC RAM
Datasheet download datasheet IS61WV12824 Datasheet
Additional preview pages of the IS61WV12824 datasheet.

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Full PDF Text Transcription

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IS61WV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY SEPTEMBER 2020 FEATURES • High-speed access time: 8, 10 ns • High-performance, low-power CMOS process • TTL compatible interface levels • Single power supply VDD 3.3V ± 5% for 8ns VDD 2.4V to 3.6V for 10ns • Fully static operation: no clock or refresh required • Three state outputs • Available in 119-pin Ball Grid Array (BGA) package • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS61WV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.
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