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IS61WV12816EFBLL - 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM

This page provides the datasheet information for the IS61WV12816EFBLL, a member of the IS64WV12816EFALL 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM family.

Datasheet Summary

Description

The ISSI IS61/64WV12816EFALL/EFBLL are high-speed, low power, 2M bit static RAMs organized as 128K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.

Features

  • High-speed access time: 8ns, 10ns, 12ns.
  • Single power supply.
  • 1.65V-2.2V VDD(IS61/64WV12816EFALL).
  • 2.4V-3.6V VDD (IS61/64WV12816EFBLL).
  • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection.
  • Three state outputs.
  • Industrial and Automotive temperature support.
  • Lead-free available.

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Datasheet preview – IS61WV12816EFBLL

Datasheet Details

Part number IS61WV12816EFBLL
Manufacturer ISSI
File Size 607.03 KB
Description 128K x 16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
Datasheet download datasheet IS61WV12816EFBLL Datasheet
Additional preview pages of the IS61WV12816EFBLL datasheet.

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Full PDF Text Transcription

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IS61/64WV12816EFALL IS61/64WV12816EFBLL 128Kx16 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM with ECC APRIL 2022 KEY FEATURES • High-speed access time: 8ns, 10ns, 12ns • Single power supply – 1.65V-2.2V VDD(IS61/64WV12816EFALL) – 2.4V-3.6V VDD (IS61/64WV12816EFBLL) • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction.
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