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IS46TR16640ED - 1Gb DDR3 SDRAM

Download the IS46TR16640ED datasheet PDF. This datasheet also covers the IS43TR16640ED variant, as both devices belong to the same 1gb ddr3 sdram family and are provided as variant models within a single manufacturer datasheet.

Description

RAS#.

CAS#.

Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • High speed data transfer rates with system frequency up to 800 MHz.
  • 8 internal banks for concurrent operation.
  • 8n-bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Burst Sequence: Sequential or Interleave.
  • BL switch on the fly.
  • Auto Self Refresh(A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS43TR16640ED-ISSI.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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IS43/46TR16640ED IS43/46TR81280ED 128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable CAS WRITE latency (CWL) based on tCK  Programmable Burst Length: 4 and 8  Programmable Burst Sequence: Sequential or Interleave  BL switch on the fly  Auto Self Refresh(ASR)  Self Refresh Temperature(SRT) ECC  Single bit error correction (per 64-bits)  Restrictions on Burst Length and Data Mask OPTIONS  Configuration: 128Mx8 64Mx16  Package: 96-ball FBGA (9mm x 13mm) for x16 78-ball FBGA (8mm x 10.
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