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IS45VM32400E - 128Mb Mobile Synchronous DRAM

This page provides the datasheet information for the IS45VM32400E, a member of the IS42VM81600E 128Mb Mobile Synchronous DRAM family.

Datasheet Summary

Description

ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture.

All input and output signals refer to the rising edge of the clock input.

Both write and read accesses to the SDRAM are burst oriented.

Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and pre- charge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • Dee.

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Datasheet preview – IS45VM32400E

Datasheet Details

Part number IS45VM32400E
Manufacturer ISSI
File Size 383.88 KB
Description 128Mb Mobile Synchronous DRAM
Datasheet download datasheet IS45VM32400E Datasheet
Additional preview pages of the IS45VM32400E datasheet.

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Full PDF Text Transcription

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IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and pre- charge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: • Sequential and Interleave • Auto Refresh (CBR) • TCSR (Temperature Compensated Self Refresh) • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full • Deep Power Down Mode (DPD) • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS • Configurations: 16M x 8, 8M x 16, 4M x 32 • Power Supply IS42VMxxx – Vdd/Vddq = 1.
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