IS45S16320D Datasheet PDF - ISSI 512Mb SDRAM Specs

IS45S16320D - 512Mb SDRAM

This page provides the datasheet information for the IS45S16320D, a member of the IS42R86400D 512Mb SDRAM family.

Datasheet Summary

Features

Clock frequency: 200, 166, 143 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave ISSI's 512Mb Synchronous DRAM achieves high-speed data.

Datasheet Details

Part number	IS45S16320D
Manufacturer	ISSI
File Size	1.33 MB
Description	512Mb SDRAM
Datasheet	IS45S16320D Datasheet
Additional preview pages of the IS45S16320D datasheet.

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Full PDF Text Transcription

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IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 MAY 2015 512Mb SDRAM device OVERVIEW FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5 • LVTTL interface • Programmable burst length – (1, 2, 4, 8, full page) • Programmable burst sequence: Sequential/Interleave ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

Published: Aug 2, 2016 |