Datasheet4U Logo Datasheet4U.com

IS45RM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM

This page provides the datasheet information for the IS45RM16160E, a member of the IS42SM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM family.

Datasheet Summary

Description

These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 8K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • I.

📥 Download Datasheet

Datasheet preview – IS45RM16160E

Datasheet Details

Part number IS45RM16160E
Manufacturer ISSI
File Size 554.56 KB
Description 4M x 16Bits x 4Banks Mobile Synchronous DRAM
Datasheet download datasheet IS45RM16160E Datasheet
Additional preview pages of the IS45RM16160E datasheet.

📁 Similar Datasheet

  • IS450 - OPIC LIGHT DETECTOR WITH BULLT-IN SIGNAL PROCESSING CIRCULT FOR LIGHT MODULATION SYSTEM (Sharp Electrionic Components)
  • IS455 - Linear Output Type OPIC Light Detector (Sharp Electrionic Components)
  • IS456 - High Speed Response Type OPIC Light Detector (Sharp Electrionic Components)
  • IS457 - High Speed Response Type OPIC Light Detector (Sharp Electrionic Components)
  • IS45LV44002B - DYNAMIC RAM (Integrated Silicon Solution)
  • IS45S16100C1 - 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)
  • IS45S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)
  • IS45S16160C - 256 Mb Single Data Rate Synchronous DRAM (Integrated Silicon Solution)
  • IS45S16160D - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
  • IS45S16320B - 32M x 16 512Mb SYNCHRONOUS DRAM (Integrated Silicon Solution)
Other Datasheets by ISSI

Full PDF Text Transcription

Click to expand full text
IS42/45SM/RM/VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input and output voltage levels are compatible with LVCMOS. Features  JEDEC standard 3.3V, 2.5V, 1.8V power supply. • Auto refresh and self refresh. • All pins are compatible with LVCMOS interface. • 8K refresh cycle / 64ms. • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst.
Published: |